PART |
Description |
Maker |
Q62702-B403 BB620 |
From old datasheet system Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管(对于Hyperband电视/录像机调谐器,屋宇署一 Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS[Siemens Semiconductor Group] Siemens Group SIEMENS AG
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BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE From old datasheet system VHF variable capacitance diode(VHF 可变电容二极 HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
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NXP Semiconductors Philips Semiconductors Philipss Quanzhou Jinmei Electro...
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HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
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Hitachi,Ltd.
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HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
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Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
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IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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Integrated Device Technology, Inc.
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HVD362 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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RENESAS[Renesas Electronics Corporation]
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ZC930 ZC930TA ZC931TA ZC932TA ZC933A ZC933ATA ZC93 |
12 Volt hyperabrupt varactor diode SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE CAP 0.022UF 600V/630V 10% X7R SMD-1812 TR-7 FLEXITERM VHF BAND, 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC ZETEX PLC
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AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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ADVANCED SEMICONDUCTOR INC
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BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V) From old datasheet system Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
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Toshiba Corporation Toshiba Semiconductor
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V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
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